| 摘要 |
A semiconductor device includes: a first front-end-of-line (FEOL) seal ring placed on a substrate; an integrated circuit formed on the substrate, and enclosed by the first seal ring; an isolation zone between the first FEOL seal ring and the integrated circuitry, wherein the first FEOL seal ring has a ring-shaped fin-like structure, the isolation zone comprises a set of fin structures, and each fin structure faces the same direction. |
