| 摘要 |
The present invention is a method for manufacturing an SOI wafer, including: implanting one or more gas ion selected from a hydrogen ion and a rare gas ion into a bond wafer composed of a semiconductor single crystal substrate from a surface of the bond wafer to form an ion-implanted layer; bonding the surface from which the ion is implanted into the bond wafer and a surface of a base wafer through an oxide film; and then delaminating the bond wafer at the ion-implanted layer by performing a delamination heat treatment with a heat treatment furnace to form the SOI wafer, wherein after the delamination heat treatment, a temperature of the heat treatment furnace is decreased to 250°C or less at temperature-decreasing rate of less than 3.0°C/min, and then the SOI wafer and the bond wafer after delamination are taken out from the heat treatment furnace. As a result, there is provided a method that can manufacture an SOI wafer in which scratches and SOI film thickness abnormalities are inhibited. |
