Energy storage device and manufacturing method thereof

摘要

An energy storage device whose discharge capacity can be improved and a method for manufacturing the energy storage device are provided. A method for manufacturing an energy storage device, in which a metal element is dispersed over a current collector, and a crystalline silicon layer including a whisker is formed as an active material layer over the surface of the current collector on which the metal element is dispersed by low pressure chemical vapor deposition (LPCVD) in which heating is performed using a deposition gas containing silicon. Having whiskers in the active material layer as described above, the surface area of the active material layer is increased; thus, the discharge capacity of the energy storage device can be increased.

主权项

1. A method for manufacturing an energy storage device comprising:
dispersing a metal element over a current collector; and performing low pressure chemical vapor deposition to form a silicon layer, using a deposition gas containing silicon as a source gas so that silicon in the silicon layer is diffused and a mixed layer comprising the metal element and silicon is formed between the current collector and the silicon layer, wherein the silicon layer includes a plurality of whiskers and is continuous over the current collector, wherein long-side directions of the plurality of whiskers are random, and wherein the metal element is an element which is capable of forming silicide.