发明名称 High efficiency thermoelectric materials based on metal/semiconductor nanocomposites
摘要 Composite epitaxial materials that comprise semimetallic ErAs nanoparticles or nanoislands epitaxially embedded in a semiconducting In0.53Ga0.47As matrix both as superlattices and randomly distributed throughout the matrix are disclosed. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. Electron concentration, mobility, and Seebeck coefficient of these materials are discussed and their potential for use in thermoelectric power generators is postulated. These composite materials in accordance with the present invention have high electrical conductivity, low thermal conductivity, and a high Seebeck coefficient. The ErAs nanoislands provides additional scattering mechanism for the mid to long wavelength phonon—the combination reduces the thermal conductivity below the alloy limit.
申请公布号 US9136456(B2) 申请公布日期 2015.09.15
申请号 US200711763326 申请日期 2007.06.14
申请人 The Regents of the University of California 发明人 Zide Joshua M. O.;Gossard Arthur C.;Shakouri Ali;Bowers John E.
分类号 H01B1/02;C30B25/02;C30B25/22;C30B29/40;H01L35/18;H01L35/26;H01L21/02 主分类号 H01B1/02
代理机构 Gates & Cooper LLP 代理人 Gates & Cooper LLP
主权项 1. A nanocomposite material, comprising: a III-V material; and a plurality of semi-metallic nanoparticles, co-deposited and randomly distributed within at least some layers of the III-V material in a three-dimensional matrix of the III-V material, wherein the plurality of semi-metallic nanoparticles increase a thermoelectric figure of merit of the III-V material.
地址 Oakland CA US