| 发明名称 | Semiconductor light-emitting element | ||
| 摘要 | A semiconductor light-emitting element includes: an ohmic electrode layer formed on a surface of a semiconductor structure layer including a light-emitting layer; a reflective metal layer containing Ag formed so as to cover at least ends of the ohmic electrode layer; and a covering electrode layer formed so as to bury the reflective metal layer. | ||
| 申请公布号 | US9136438(B2) | 申请公布日期 | 2015.09.15 |
| 申请号 | US201414487819 | 申请日期 | 2014.09.16 |
| 申请人 | STANLEY ELECTRIC CO., LTD. | 发明人 | Tanaka Satoshi |
| 分类号 | H01L33/00;H01L33/40 | 主分类号 | H01L33/00 |
| 代理机构 | Holtz, Holtz, Goodman & Chick PC | 代理人 | Holtz, Holtz, Goodman & Chick PC |
| 主权项 | 1. A semiconductor light-emitting element comprising: an ohmic electrode layer formed on a surface of a semiconductor structure layer including a light-emitting layer; a reflective metal layer containing Ag formed so as to cover at least ends of the ohmic electrode layer; and a covering electrode layer formed so as to bury the reflective metal layer, wherein the covering electrode layer is made of an oxide film having a conductive property, and wherein the ohmic electrode layer is made of an oxide film having light-transmitting and conductive properties. | ||
| 地址 | Tokyo JP | ||