Bipolar magnetic junction transistor with magnetoamplification and applications of same

摘要

In one aspect of the present invention, the semiconductor device is a bipolar magnetic junction transistor (MJT), and includes a first non-magnetic semiconductor layer, a second non-magnetic semiconductor layer, and a magnetic semiconductor layer. The first non-magnetic semiconductor layer has majority charge carriers of a first polarity. The second non-magnetic semiconductor layer is disposed adjacent to the first non-magnetic semiconductor layer such that a first junction is formed at a first interface region between the first non-magnetic semiconductor layer and the second non-magnetic semiconductor layer. The magnetic semiconductor layer has majority charge carriers of the first polarity, and is disposed adjacent to the second non-magnetic semiconductor layer such that a second junction is formed at a second interface region between the second non-magnetic semiconductor layer and the magnetic semiconductor layer.

主权项

1. A semiconductor device, comprising:
(a) a first non-magnetic semiconductor layer with majority charge carriers of a first polarity; (b) a second non-magnetic semiconductor layer disposed adjacent to the first non-magnetic semiconductor layer such that a first junction is formed at a first interface region between the first non-magnetic semiconductor layer and the second non-magnetic semiconductor layer; (c) a magnetic semiconductor layer with majority charge carriers of the first polarity disposed adjacent to the second non-magnetic semiconductor layer such that a second junction is formed at a second interface region between the second non-magnetic semiconductor layer and the magnetic semiconductor layer; (d) a first electrode that is in an ohmic contact with the first non-magnetic semiconductor layer; (e) a second electrode that is in an ohmic contact with the second non-magnetic semiconductor layer; and (f) a third electrode that is in an ohmic contact with the magnetic semiconductor layer.