Semiconductor device having lateral element

摘要

A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1×1018 cm−3.

主权项

1. A semiconductor device having a lateral element, the semiconductor device comprising:
a semiconductor substrate including a first conductivity-type semiconductor layer; a first electrode on a surface of the semiconductor layer; a second electrode on the surface of the semiconductor layer; and a resistive field plate wound in a scroll shape around the first electrode and extending toward the second electrode, wherein a resistance of the resistive field plate is equal to or less than 1×106Ω/sq., wherein the semiconductor substrate is a SOI substrate including a supporting substrate, a buried insulating layer on the supporting substrate, and an active layer on the buried insulating layer, the active layer serving as the semiconductor layer, the active layer has a first conductivity-type interface layer at an interface with the buried insulating layer, a concentration of a second impurity in the interface layer is greater than a concentration of the second impurity in a remaining portion of the active layer, the second impurity is of first conductivity type, a separation distance between adjacent turns of the scroll shape is equal to or less than 1 μm, and a dose of the second impurity in the interface layer ranges from 1.3×1012 cm−2 to 2.8×1012 cm−2.