发明名称 Semiconductor device
摘要 Adverse effects of variation in threshold voltage are reduced. In a semiconductor device, electric charge is accumulated in a capacitor provided between a gate and a source of a transistor, and then, the electric charge accumulated in the capacitor is discharged; thus, the threshold voltage of the transistor is obtained. After that, current flows to a load. In the semiconductor device, the potential of one terminal of the capacitor is set higher than the potential of a source line, and the potential of the source line is set lower than the potential of a power supply line and the cathode side potential of the load.
申请公布号 US9136287(B2) 申请公布日期 2015.09.15
申请号 US201414258131 申请日期 2014.04.22
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Kimura Hajime
分类号 H01L31/20;H01L31/036;H01L31/0376;H01L27/12;H05B33/08 主分类号 H01L31/20
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A semiconductor device comprising: a transistor; a capacitor one electrode of which is electrically connected to a gate of the transistor; a first switch one terminal of which is electrically connected to the gate of the transistor, and the other terminal of which is electrically connected to one of a source and a drain of the transistor; a second switch one terminal of which is electrically connected to the other of the source and the drain of the transistor, and the other terminal of which is electrically connected to the other electrode of the capacitor; a third switch one terminal of which is electrically connected to the other electrode of the capacitor; and a display element one electrode of which is electrically connected to the other of the source and the drain of the transistor, and the other electrode of which is electrically connected to the other terminal of the third switch.
地址 Atsugi-shi, Kanagawa-ken JP