| 主权项 |
1. A semiconductor device comprising:
a first semiconductor chip including a first internal circuit formed in a first semiconductor substrate; and a first plurality of penetrating electrodes each penetrating through the first semiconductor substrate, wherein the first plurality of penetrating electrodes includes a second plurality of penetrating electrodes arranged collinearly along a first line, the first line being a straight line, the second plurality of penetrating electrodes includes a first penetrating electrode, a second penetrating electrode, a third penetrating electrode and a fourth penetrating electrode, the first penetrating electrode and the second penetrating electrode are in a floating state without being electrically connected to the first internal circuit, the third penetrating electrode is electrically connected to a first power supply line that conveys a first power supply potential to the first internal circuit, the fourth penetrating electrode is electrically connected to a second power supply line that conveys a second power supply potential to the first internal circuit, the third penetrating electrode and the fourth penetrating electrode are arranged between the first penetrating electrode and the second penetrating electrode, and wherein the second plurality of penetrating electrodes further includes a fifth penetrating electrode arranged between the third penetrating electrode and the fourth penetrating electrode, the fifth penetrating electrode being in the floating state without being electrically connected to the first internal circuit, the second power supply potential being different from the first power supply potential. |
