| 摘要 |
A process gas supply cycle pattern that will adversely affect the result of processing is changed beforehand. Based on information supplied from a setting input section, a pattern computation section obtains the result of computation of a process gas supply cycle pattern that includes a rotation cycle of a substrate rotation mechanism, a supply cycle of a process gas, a supply time of the process gas, and a supply count of the process gas. Based on information supplied from the setting input section, a simulator simulates the shape of a supply region of the process gas to be supplied onto a substrate. A comparison section compares the result of computation of the process gas supply cycle pattern determined by the pattern computation section against the result of referencing of a process gas supply cycle pattern that adversely affects the result of processing and is obtained from a storage section. |
| 主权项 |
1. A substrate processing apparatus comprising:
a substrate processing chamber that houses and processes at least one substrate having an upper surface; a substrate rotation mechanism that rotatably retains the substrate in the substrate processing chamber; a process gas supply section comprising at least two gas supply devices having a plurality of gas supply ports, at least one of said gas supply ports positioned parallel to and spaced from a periphery of the substrate so that the processing gas supply section supplies intermittently a process gas in a direction substantially parallel to the upper surface of the substrate from the periphery thereof in the substrate processing chamber; and a control device that controls the substrate rotation mechanism and the process gas supply section, wherein the control device is configured to include: a setting input section that inputs a rotation speed setting P for the substrate rotation mechanism, a supply cycle setting Q, a supply time setting R, and a supply count setting S for the process gas to be supplied from the process gas supply section, and a pattern computation section that, in accordance with information supplied from the setting input section, obtains the result of computation of a process gas supply cycle pattern that includes a rotation cycle of the substrate rotation mechanism, and a supply cycle, a supply time, and a supply count of the process gas so as to supply the process gas to all of a periphery of the substrate, and wherein the process gas supply section includes at least two process gas supply devices, and a process gas supply device supplies one process gas from one side of the periphery of the substrate, and another process gas supply device supplies a different process gas from an opposite side of the periphery of the substrate. |
