| 发明名称 |
Using tunnel junction and bias for effective current injection into terahertz magnon |
| 摘要 |
An apparatus comprising a ferromagnetic conductive material including a magnon gain medium (MGM) and a tunnel junction coupled to the ferromagnetic conductive material are provided. The magnon gain medium (MGM) further comprises a conduction band that is split into two sub bands separated by an exchange energy gap, a first sub band having spin up, and a second sub band having spin down. The applied bias voltage is configured to shift the Fermi level of the external metallic contact with respect to the Fermi level of the ferromagnetic conductive material so that the injected electrons are configured to tunnel into the second sub band having spin down. |
| 申请公布号 |
US9136665(B1) |
申请公布日期 |
2015.09.15 |
| 申请号 |
US201314088448 |
申请日期 |
2013.11.25 |
| 申请人 |
MAGTERA, INC. |
发明人 |
Tankhilevich Boris G.;Korenblit Yehiel |
| 分类号 |
H01S3/00;H01S3/0959;H01S3/04;H01S1/02 |
主分类号 |
H01S3/00 |
| 代理机构 |
|
代理人 |
Tankhilevich Boris G. |
| 主权项 |
1. An apparatus comprising:
a ferromagnetic conductive material including a magnon gain medium, said magnon gain medium further comprising: a conduction band that is split into two sub bands separated by an exchange energy gap, a first sub band having spin up, and a second sub band having spin down, and a tunnel junction coupled to said ferromagnetic conductive material; wherein electrons are injected into said ferromagnetic conductive material from an external metallic contact by tunneling via said tunnel junction. |
| 地址 |
Walnut Creek CA US |
