Crystalline silicon ingot and method of fabricating the same

摘要

A crystalline silicon ingot and a method of manufacturing the same are provided. Using a crystalline silicon seed layer, the crystalline silicon ingot is formed by a directional solidification process. The crystalline silicon seed layer is formed of multiple primary monocrystalline silicon seeds and multiple secondary monocrystalline silicon seeds. Each of the primary monocrystalline silicon seeds has a first crystal orientation different from (100). Each of the secondary monocrystalline silicon seeds has a second crystal orientation different from the first crystal orientation. Each of the primary monocrystalline silicon seeds is adjacent to at least one of the secondary monocrystalline silicon seeds, and separate from the others of the primary monocrystalline silicon seeds.

主权项

1. A method for fabricating a crystalline silicon ingot, comprising:
providing a crystalline silicon seed layer in a mold, wherein said crystalline silicon seed layer comprises multiple primary monocrystalline silicon seeds and multiple secondary monocrystalline silicon seeds, each primary monocrystalline silicon seeds has a first crystal orientation different from (100), each of said secondary monocrystalline silicon seeds has a second crystal orientation different from said first crystal orientation, an angle between said first and second crystal orientations is not less than about 35 degrees, each primary monocrystalline silicon seeds is adjacent to at least one secondary monocrystalline silicon seeds, and separate from other primary monocrystalline silicon seeds; filling a silicon melt into said mold such that said silicon melt contacts said crystalline silicon seed layer; and cooling said mold using a directional solidification process such that said silicon melt is solidified and said crystalline silicon ingot is formed comprising said crystalline silicon seed layer, wherein said first crystal orientation is (110), said second crystal orientation is (100), multiple secondary monocrystalline silicon seeds are alternately arranged between multiple primary monocrystalline silicon seeds, and volume ratio of said primary monocrystalline silicon seeds to said crystalline silicon seed layer is greater than about 80%.