发明名称 Memory, memory system, and error checking and correcting method for memory
摘要 A memory system includes an error checking and correction (ECC) engine configured to perform error checking and correction of data temporarily stored in a first memory array and data read out from the first memory array according to a first method, and perform error checking and correction of data stored in a second memory array after read out from the first memory array and data read out from the second memory array according to a second method, wherein the first method and the second method are selected in response to a control signal having at least a first logic level, and the second method checks and corrects data errors occurring at a higher rate compared the first method.
申请公布号 US9136872(B2) 申请公布日期 2015.09.15
申请号 US201213648421 申请日期 2012.10.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Oh Eun-chu;Kim Jae-hong;Kong Jun-jin
分类号 G06F11/00;H03M13/05;H03M13/35;H03M13/37;H03M13/11 主分类号 G06F11/00
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A memory system, comprising: an error checking and correction (ECC) engine configured to perform error checking and correction of data temporarily stored in a first memory array and data read out from the first memory array according to a first method, and perform error checking and correction of data stored in a second memory array after reading out data from the first memory array and data read out from the second memory array according to a second method, wherein the ECC engine is configured to perform the first method and the second method in response to a control signal having at least a first logic level, and an error correcting capability of the second method is greater than an error correcting capability of the first method; and an ECC control unit configured to generate the control signal at the first logic level if a value indicating a deterioration state of the first memory array is less than a first reference value, the first logic level of the control signal corresponding to a flag indicating to which of the first memory array and the second memory array memory array data is to be programmed; and if the value indicating the deterioration state of the first memory array is greater than a second reference value, then the ECC control unit is configured to generate the control signal at a second logic level different from the first logic level, and in response to the second logic level of the control signal, the ECC engine sets the second method to be the same as the first method.
地址 Gyeonngi-Do KR