| 发明名称 | System and method for dark field inspection | ||
| 摘要 | The present disclosure provides a method for fabricating a semiconductor structure. The method comprises providing a substrate and a patterned layer formed on the substrate, one or more overlay marks being formed on the patterned layer; performing a pre-film-formation overlay inspection using a bright field (BF) inspection tool to receive a pre-film-formation data on the one or more overlay marks on the patterned layer; forming one or more layers on the patterned layer; performing a post-film-formation overlay inspection using a dark field (DF) inspection tool to receive a post-film-formation data on the one or more overlay marks underlying the one or more layers; and determining whether the pre-film-formation data matches the post-film-formation data. | ||
| 申请公布号 | US9134633(B2) | 申请公布日期 | 2015.09.15 |
| 申请号 | US201314138743 | 申请日期 | 2013.12.23 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lin Bo-Jiun;Yao Hsin-Chieh;Chen Hai-Ching;Bao Tien-I |
| 分类号 | G03F9/00;H01L21/66;G01N21/88;H01L21/027;G01N21/956 | 主分类号 | G03F9/00 |
| 代理机构 | Haynes & Boone, LLP | 代理人 | Haynes & Boone, LLP |
| 主权项 | 1. A method for fabricating a semiconductor structure, comprising: providing a substrate and a patterned layer formed on the substrate, one or more overlay marks being formed on the patterned layer; performing a pre-film-formation overlay inspection using a bright field (BF) inspection tool to receive a pre-film-formation data on the one or more overlay marks on the patterned layer; forming one or more layers on the patterned layer; performing a post-film-formation overlay inspection using a dark field (DF) inspection tool to receive a post-film-formation data on the one or more overlay marks underlying the one or more layers; and determining whether the pre-film-formation data matches the post-film-formation data. | ||
| 地址 | Hsin-Chu TW | ||