Structure of capacitor and fabrication method thereof

摘要

A capacitor including a substrate, a conductive layer, a middle dielectric material layer, a first dielectric material layer, and a second dielectric material layer is provided. The conductive layer includes a first electrode and a second electrode, and the conductive layer is located over the substrate. The middle dielectric material layer is located between the first electrode and the second electrode. The first dielectric material layer is located between the middle dielectric material layer and the first electrode. The second dielectric material layer is located between the middle dielectric material layer and the second electrode. The dielectric constant of the middle dielectric material layer is different from the dielectric constants of the first dielectric material layer and the second dielectric material layer.

主权项

1. A fabricating method of a capacitor, comprising steps of:
forming a dielectric material layer on a substrate; patterning the dielectric material layer to form a patterned dielectric material layer, wherein the patterned dielectric material comprises a first opening and a second opening therein; forming a first electrode in the first opening, and forming a second electrode in the second opening at the same time; at least removing a portion of the patterned dielectric material layer that is between the first electrode and second electrode to form a third opening therein; forming a middle dielectric material layer in the third opening, wherein the middle dielectric material layer comprises a high dielectric constant material layer, wherein the step of forming the third opening comprises: forming a second capping layer on the patterned dielectric material layer, the first electrode, and the second electrode; forming a middle layer on the second capping layer; forming a patterned mask layer on the middle layer, wherein a width of a third opening of the patterned mask layer is equal to a distance between the first electrode and the second electrode; patterning the middle layer, the second capping layer and the patterned dielectric material layer by using the patterned mask layer as a mask to form the third opening; and removing the patterned mask layer.