发明名称 Method for producing anodized film
摘要 A method for manufacturing an anodized film according to an embodiment of the present invention includes the steps of: (a) providing a multilayer structure that includes a base, a sacrificial layer which is provided on the base and which contains aluminum, and an aluminum layer which is provided on a surface of the sacrificial layer; (b) partially anodizing the aluminum layer to form a porous alumina layer which has a plurality of minute recessed portions; and (c) after step (b), separating the porous alumina layer from the multilayer structure. According to an embodiment of the present invention, a self-supporting anodized film which includes a porous alumina layer can be manufactured more conveniently as compared with the conventional methods.
申请公布号 US9133558(B2) 申请公布日期 2015.09.15
申请号 US201113877182 申请日期 2011.10.06
申请人 SHARP KABUSHIKI KAISHA 发明人 Hayashi Hidekazu
分类号 C25D1/08;C25D11/04;C23C14/00;C23C14/18;C23C14/58;C25D11/12;C25D11/24;C25D11/10 主分类号 C25D1/08
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A method for manufacturing an anodized film, comprising the steps of: (a) providing a multilayer structure that includes an inorganic or plastic base, a sacrificial layer which is provided on the base and which contains aluminum, and an aluminum layer which is provided on a surface of the sacrificial layer; (b) partially anodizing the aluminum layer to form a porous alumina layer which has a plurality of minute recessed portions; and (d) after step (b), separating the porous alumina layer from the multilayer structure, wherein the anodized film is a self-supporting film which includes the porous alumina layer, and wherein the sacrificial layer contains aluminum and either of oxygen or nitrogen, and the sacrificial layer has a profile such that a content of the aluminum is higher in a portion which is closer to the aluminum layer than in another portion which is closer to the base.
地址 Osaka JP