Process for fabricating a three-dimensional integrated structure with improved heat dissipation, and corresponding three-dimensional integrated structure

摘要

A three-dimensional integrated structure includes a first integrated circuit having a substrate assembled in an interlocking manner with a second integrated circuit having a substrate. The substrate of the first integrated circuit comprises first pores separated by first partitions, and the substrate of the second integrated circuit comprises second pores separated by second partitions. The first partitions interlock with the second pores and the second partitions interlock with the first pores so as to define at least one region bounded by the two substrates. A phase-change material is retained within the at least one region.

主权项

1. A process for fabricating a three-dimensional integrated structure, comprising:
forming first pores separated by first partitions in a substrate of a first integrated circuit; forming second pores separated by second partitions in a substrate of a second integrated circuit; wherein the first partitions are configured to interlock with the second pores and the second partitions are configured to interlock with the first pores; at least partially filling the second pores with a phase-change material configured for liquefying in the temperature ranges corresponding to the operating temperature of the first and second integrated circuits; assembling the substrate of the first integrated circuit with the substrate of the second integrated circuit so as to form at least one region bounded by said two substrates, defined by the interlock and retaining said phase-change material.