| 发明名称 |
Bulk acoustic wave resonator having piezoelectric layer with multiple dopants |
| 摘要 |
A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer. |
| 申请公布号 |
US9136819(B2) |
申请公布日期 |
2015.09.15 |
| 申请号 |
US201213662460 |
申请日期 |
2012.10.27 |
| 申请人 |
Avago Technologies General IP (Singapore) Pte. Ltd. |
发明人 |
Grannen Kevin J.;Ionash Ivan;Feng Chris;Lamers Tina;Choy John |
| 分类号 |
H03H9/15;H03H9/02;H03H9/13;H03H9/17 |
主分类号 |
H03H9/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bulk acoustic wave (BAW) resonator structure, comprising:
a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising a piezoelectric material doped with a plurality of rare earth elements for improving piezoelectric properties of the piezoelectric layer; and a second electrode disposed over the piezoelectric layer. |
| 地址 |
Singapore SG |
