High voltage field effect transistor finger terminations

摘要

A field effect transistor having at least one structure configured to redistribute and/or reduce an electric field from gate finger ends is disclosed. Embodiments of the field effect transistor include a substrate, an active region disposed on the substrate, at least one source finger in contact with the active region, at least one drain finger in contact with the active region, and at least one gate finger in rectifying contact with the active region. One embodiment has at least one end of the at least one gate finger extending outside of the active region. Another embodiment includes at least one source field plate integral with the at least one source finger. The at least one source field plate extends over the at least one gate finger that includes a portion outside of the active region. Either embodiment can also include a sloped gate foot to further improve high voltage operation.

主权项

1. A field effect transistor comprising:
a substrate; an active region disposed on the substrate; at least one source finger in contact with the active region; at least one gate finger in rectifying contact with the active region; at least one drain finger in contact with the active region; and at least one source field plate integral with the at least one source finger such that the at least one source field plate extends over the at least one gate finger with a portion of the source field plate extending outside of the active region such that a gate leakage current is less than around about 10 μA/mm for a drain-to-source voltage that ranges from around about 500 V to around about 1200 V.