Methods and apparatus of packaging semiconductor devices

摘要

Methods and apparatuses for wafer level packaging (WLP) semiconductor devices are disclosed. A redistribution layer (RDL) is formed on a first passivation layer in contact with a conductive pad over a surface of a die. The RDL layer is on top of a first region of the first passivation layer. A second passivation layer is formed on the RDL layer with an opening to expose the RDL layer, and over the first passivation layer. An under bump metallization (UBM) layer is formed over the second passivation layer in contact with the exposed RDL layer. A second region of the first passivation layer disjoint from the first region is determined by projecting an outer periphery of a solder ball or other connector onto the surface.

主权项

1. A method for forming a package device comprising
forming a redistribution layer (RDL) on a first passivation layer and a conductive pad on a substrate, wherein the RDL layer is in contact with the conductive pad through a first opening in the first passivation layer exposing the conductive pad and extends from the conductive pad to a termination point outside a solder ball projection region; forming a second passivation layer on top of the RDL layer and the first passivation layer, the second passivation layer having a second opening to expose a portion of the RDL layer; and forming an under bump metallization (UBM) layer over the second passivation layer and in the second opening to make contact with the exposed portion of the RDL layer, the UBM extending from a second point outside the solder ball projection region to a point within the solder ball projection region; wherein the solder ball projection region is defined as that region determined by projecting an outer periphery of a solder ball onto a surface of the substrate.