发明名称 Semiconductor device including memory capable of reducing power consumption
摘要 A semiconductor device includes a plurality of memory arrays and a plurality of memory array control circuits. Each of the plurality of memory array control circuits includes a read/write control circuit for controlling a read/write operation for the memory array, and a selection circuit for selecting and activating the memory array based on a clock signal and an output signal from the read/write control circuit.
申请公布号 US9135966(B2) 申请公布日期 2015.09.15
申请号 US201213566779 申请日期 2012.08.03
申请人 RENESAS ELECTRONICS CORPORATION 发明人 Iwamoto Hisashi;Yano Yuji;Inoue Kazunari
分类号 G11C7/00;G11C7/22;G11C7/10 主分类号 G11C7/00
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. A semiconductor device comprising: a plurality of memory arrays, and a plurality of memory array control circuits, each of said plurality of memory array control circuits including: a read/write control circuit for controlling a read/write operation to the memory array, and a selection circuit for selecting and activating the memory array based on a clock signal and an output signal from said read/write control circuit, wherein said read/write control circuit includes: a counter for incrementing a count number when a write command is inputted, and decrementing said count number when a read command is inputted, and a determination circuit for determining whether or not effective data exists in said memory array, based on said count number of said counter.
地址 Kanagawa JP