| 发明名称 | Optoelectronic device and the manufacturing method thereof | ||
| 摘要 | An optoelectronic device comprises a semiconductor stack having a first surface, a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack, a void in the semiconductor stack and surrounding the contact layer, and a mirror structure on the first surface and covering the contact layer, wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion. | ||
| 申请公布号 | US9136436(B2) | 申请公布日期 | 2015.09.15 |
| 申请号 | US201414489169 | 申请日期 | 2014.09.17 |
| 申请人 | EPISTAR CORPORATION | 发明人 | Lin Kun-De;Chan Yao-Ning;Chen Yi-Ming;Hsu Tzu-Chieh |
| 分类号 | H01L33/00;H01L33/38;H01L33/42;H01L33/40;H01L33/22;H01L33/44 | 主分类号 | H01L33/00 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. An optoelectronic device, comprising: a semiconductor stack having a first surface; a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack; a void in the semiconductor stack and surrounding the contact layer; and a mirror structure on the first surface and covering the contact layer; wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion. | ||
| 地址 | Hsinchu TW | ||