发明名称 Solar cell capable of recycling a substrate and method for manufacturing the same
摘要 The present invention relates to a solar cell that can recycle a substrate, and a manufacturing method thereof. The solar cell includes: i) a plurality of nano-structures distanced from each other and extended in one direction; ii) a first conductive layer covering a first end of at least one of the plurality of nano-structures; iii) a second conductive layer distanced from the first conductive layer and covering a second end of the nano-structure; and iv) a dielectric layer disposed between the first conductive layer and the second conductive layer.
申请公布号 US9136404(B2) 申请公布日期 2015.09.15
申请号 US200913139019 申请日期 2009.10.27
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 Lee Jung-Ho;Um Han-Don;Jee Sang-Won;Park Kwang-Tae;Seo Hong-Seok;Jung Jin-Young
分类号 H01L31/00;H01L31/0216;H01L31/0352;H01L31/0384;H01L31/065;H01L31/068;H01L31/075;H01L31/18 主分类号 H01L31/00
代理机构 Lexyoume IP Meister, PLLC 代理人 Lexyoume IP Meister, PLLC
主权项 1. A solar cell comprising: a plurality of nano-structures serially arranged along an x-y plane direction such that each of the plurality of nano-structures is spaced from each other, not contacting each other; a first conductive layer directly covering a first end of each of the plurality of nano-structures such that the first end is located in the first conductive layer; a second conductive layer distanced from the first conductive layer along a z-axis direction, the second conductive layer directly covering a second end of each of the plurality of nano-structures such that the second end is located in the second conductive layer; a dielectric layer disposed between the first conductive layer and the second conductive layer such that one side of the dielectric layer contacts the first conductive layer and the other side of the dielectric layer contacts the second conductive layer, and a thickness of the dielectric layer corresponding to a distance between the one side and the other side of the dielectric layer is constant along the x-y plane direction, the dielectric layer directly contacting a portion of each of the plurality of nano-structures that connects the first end and the second end; a transparent contact layer directly contacting the first conductive layer; a first contact portion formed in an upper portion of the transparent contact layer; a second contact portion formed in an upper portion of the second conductive layer; a first silicide layer formed at the first end of each of the plurality of nano-structures such that both the first end and the first silicide layer are located in the first conductive layer, wherein the first silicide layer is configured to function as a catalyst for growth of each of the plurality of nano-structures; and a second silicide layer formed at the second end of the nano-structure such that both the second end and the second silicide layer are located in the second conductive layer, wherein each of the plurality of nano-structures comprises an n-type doping area and a first p-type doping area, the first p-type doping area surrounding the n-type doping area, wherein a first portion of the n-type doping area and a second portion of the first p-type doping area surrounding the first portion are surrounded by the second silicide layer, wherein the first contact portion and the second contact portion are connected with a passive element such that the passive element is supplied with power using the solar cell, wherein a highly concentrated second p-type doping area is formed in each of the plurality of nano-structures, the second p-type doping area contacting the first silicide layer and the first conductive layer, and wherein each of the plurality of nano-structures is formed in a shape of a nano-rod that extends along the z-axis direction such that each of the plurality of nano-structures is parallel to each other.
地址 Seoul KR