发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line. |
申请公布号 |
US9136216(B2) |
申请公布日期 |
2015.09.15 |
申请号 |
US201414181100 |
申请日期 |
2014.02.14 |
申请人 |
ROHM CO., LTD. |
发明人 |
Nishimura Isamu;Mifuji Michihiko;Nishio Kazumasa |
分类号 |
H01L21/20;H01L23/522;H01L27/01;H01L49/02;H01L23/525;H01L23/532 |
主分类号 |
H01L21/20 |
代理机构 |
Chen Yoshimura LLP |
代理人 |
Chen Yoshimura LLP |
主权项 |
1. A semiconductor device having a resistor area and a wiring area selectively disposed on a semiconductor substrate, comprising:
an interlayer insulating film disposed above the semiconductor substrate; a thin-film resistor that is disposed on the interlayer insulating film and that is in the resistor area; a via that is formed in the interlayer insulating film and that contacts the thin-film resistor from below; a wiring line that is disposed above the interlayer insulating film and that is in the wiring area; a dummy wiring line that is disposed in a wiring layer in the same layer as the wiring line and that covers the thin-film resistor from above; and an insulating film interposed between the thin-film resistor and the dummy wiring line. |
地址 |
Kyoto JP |