Semiconductor device and manufacturing method thereof

摘要

To provide a semiconductor device comprising a first layer that is provided on a semiconductor substrate and includes a first wiring pattern planarized by CMP and a plurality of first dummy patterns made of a same material as the first wiring pattern and a second layer that is provided above the semiconductor substrate and includes a second wiring pattern planarized by CMP and a plurality of second dummy patterns made of a same material as the second wiring pattern. A central axis of each of the second dummy patterns coincides with that of a corresponding one of the first dummy patterns in a direction perpendicular to the semiconductor substrate.

主权项

1. A semiconductor device comprising:
a first level wiring structure formed over a semiconductor substrate, the first level wiring structure including first and second wiring patterns disposed with a first gap therebetween, one or more first dummy patterns arranged in the first gap between the first and second wiring patterns, and a first insulating layer covering the first and second wiring patterns and the one or more first dummy patterns; and a second level wiring structure formed over the semiconductor substrate, the second wiring structure including third and fourth wiring patterns disposed with a second gap therebetween, one or more second dummy patterns arranged in the second gap between the third and fourth wiring patterns, and a second insulating layer covering the third and fourth wiring patterns and the one or more second dummy patterns, wherein each of the one or more second dummy patterns is vertically aligned in central axis with an associated one of the one or more first dummy patterns, and wherein the each of the one or more second dummy patterns is different in size with the associated one of the one or more first dummy patterns.