Flash memory apparatus and data reading method thereof

摘要

A flash memory apparatus and a data reading method thereof are provided. A boost voltage greater than a pre-charge voltage is provided to a gate of a source discharge transistor when a data reading operation is performed on a memory unit, so as to enhance discharge capability of the source discharge transistor.

主权项

1. A flash memory apparatus, comprising:
a memory unit, comprising a plurality of memory cells; a source discharge transistor, having a drain coupled to sources of the memory cells and having a source coupled to a ground; a pre-charge unit, coupled to a gate of the source discharge transistor and controlled by a pre-charge control signal to stop providing a pre-charge voltage to the gate of the source discharge transistor when the memory unit performs a data reading operation; a boost unit, coupled to the gate of the source discharge transistor and providing a boost voltage to the gate of the source discharge transistor according to a boost voltage control signal after the pre-charge unit stops providing the pre-charge voltage, wherein a level of the boost voltage is greater than a level of the pre-charge voltage; and a control unit, coupled to the pre-charge unit and the boost unit and sending the pre-charge control signal and the boost voltage control signal according to a read command.