Semiconductor structure

摘要

A semiconductor structure is provided. The semiconductor structure comprises a substrate, a deep well formed in the substrate, a first well and a second well formed in the deep well, a gate electrode formed on the substrate and disposed between the first well and the second well, a first isolation, and a second isolation. The second well is spaced apart from the first well. The first isolation extends down from the surface of the substrate and is disposed between the gate electrode and the second well. The second isolation extends down from the surface of the substrate and is adjacent to the first well. A ratio of a depth of the first isolation to a depth of the second isolation is smaller than 1.

主权项

1. A semiconductor structure, comprising:
a substrate having a first conductive type; a deep well having a second conductive type, formed in the substrate and extending down from a surface of the substrate; at least one first well having the first conductive type, extending down from the surface of the substrate and formed in the deep well; at least one second well having the second conductive type, extending down from the surface of the substrate and formed in the deep well, and the second well spaced apart from the first well; at least one gate electrode, formed on the substrate and disposed between the first well and the second well; at least one first isolation, extending down from the surface of the substrate and disposed between the gate electrode and the second well; and at least one second isolation, extending down from the surface of the substrate and adjacent to the first well; wherein a ratio of a depth of the first isolation to a depth of the second isolation is smaller than 1.