| 主权项 |
1. A semiconductor device comprising:
a p-type semiconductor layer mainly made of gallium nitride (GaN); an n-type semiconductor layer mainly made of gallium nitride (GaN) and joined with the p-type semiconductor layer; a protective film provided to have electrical insulation property, and arranged to coat the p-type semiconductor layer and the n-type semiconductor layer, the protective film including,
a first layer made of aluminum oxide (Al2O3) and arranged adjacent to the p-type semiconductor layer and the n-type semiconductor layer to coat an edge of a p-n junction surface where the p-type semiconductor layer is joined with the n-type semiconductor layer,a second layer made of an electrical insulation material different from aluminum oxide (Al2O3) and formed on the first layer, andan opening structure formed to pass through the first layer and the second layer; a gate insulating film provided to have electrical insulation property and placed inside of the opening structure of the protective film to coat the p-type semiconductor layer and the n-type semiconductor layer, the gate insulating film is formed of a composition different from the protective film; and a gate electrode joined with the gate insulating film. |
