Polysilicon-based thin film transistor

摘要

A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s).

主权项

1. A thin film transistor, comprising:
a substrate; a gate electrode on the substrate; an insulating layer on the gate electrode, the insulating layer defining a through-hole that exposes a portion of the gate electrode; a source electrode and a drain electrode on and in contact with a top surface of the insulating layer; and at least one polysilicon layer connected to an end of the source electrode and to an end of the drain electrode, the at least one polysilicon layer extending over the exposed portion of the gate electrode, the at least one polysilicon layer being above the through-hole.