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发明名称
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要
<p>본 반도체장치는 반도체층과, 반도체층의 단부를 덮는 게이트 전극과, 그 반도체층 및 게이트 전극을 절연하는 절연층을 가진다. 반도체층의 단부 및 게이트 전극이 겹치는 영역을 절연하는 절연층의 막 두께가, 반도체층의 중앙부를 덮는 절연층의 막 두께보다 두껍다.</p>
申请公布号
KR101553315(B1)
申请公布日期
2015.09.15
申请号
KR20140078003
申请日期
2014.06.25
申请人
发明人
分类号
H01L21/336;H01L29/78;H01L29/786
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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