Methods for forming memory devices with reduced operational energy in phase change material

摘要

Methods of forming and operating phase change memory devices include adjusting an activation energy barrier between a metastable phase and a stable phase of a phase change material in a memory cell. In some embodiments, the activation energy barrier is adjusted by applying stress to the phase change material in the memory cell. Memory devices include a phase change memory cell and a material, structure, or device for applying stress to the phase change material in the memory cell. In some embodiments, a piezoelectric device may be used to apply stress to the phase change material. In additional embodiments, a material having a thermal expansion coefficient greater than that of the phase change material may be positioned to apply stress to the phase change material.

主权项

1. A method of fabricating a memory device, comprising:
selectively stressing a phase change material in at least one memory cell of a partially fabricated semiconductor device to reduce a magnitude of an activation energy barrier between different phases of the phase change material, comprising:
inducing strain in a piezoelectric material using an electric field to expand or contract the piezoelectric material in a direction; andusing the induced strain in the piezoelectric material to stress the phase change material; completing fabrication of the memory device; and retaining the stress in the phase change material at least until fabrication of the memory device is complete.