发明名称 Reducing formation of oxide on solder
摘要 In certain embodiments, a system includes a deposition system and a plasma/bonding system. The deposition system deposits a solder outwardly from a substrate of a number of substrates. The plasma/bonding system comprises a plasma system configured to plasma clean the substrate and a bonding system configured to bond the substrates. The plasma/bonding system at least reduces reoxidation of the solder. In certain embodiments, a method comprises depositing solder outwardly from a substrate, removing metal oxide from the substrate, and depositing a capping layer outwardly from the substrate to at least reduce reoxidation of the solder.
申请公布号 US9132496(B2) 申请公布日期 2015.09.15
申请号 US201414468660 申请日期 2014.08.26
申请人 Raytheon Company 发明人 Diep Buu Q.;Kocian Thomas A.;Gooch Roland W.
分类号 B23K31/02;B23K1/20;B23K1/00;B23K1/008;B23K3/047;B23K3/08;H01L21/67;H01L23/00 主分类号 B23K31/02
代理机构 Daly, Crowley, Mofford & Durkee, LLP 代理人 Daly, Crowley, Mofford & Durkee, LLP
主权项 1. A method, comprising: receiving a first substrate into a first chamber having an interior space substantially sealed from an environment external to the first chamber, wherein the first substrate comprises a portion of solder formed therein; and performing all of the following actions while the first substrate is disposed within the first chamber: plasma cleaning the first substrate under substantial vacuum conditions, a first time; depositing a capping layer of material to the first substrate after the first substrate has been plasma cleaned the first time; plasma cleaning the first substrate, under substantial vacuum conditions, a second time, after the first substrate has had a capping layer deposited to it; and bonding the first substrate to a second substrate that is received within the first chamber, the bonding occurring under substantial vacuum conditions, wherein the bonding occurs after the first substrate has been plasma cleaned first and second times and has had the capping layer deposited to it.
地址 Waltham MA US