METHOD FOR MANUFACTURING SEMICONDUCTOR EPITAXIAL WAFER, AND SEMICONDUCTOR EPITAXIAL WAFER

摘要

The present invention is a method for manufacturing a semiconductor epitaxial wafer characterized in having: a step for producing an epitaxial wafer by epitaxially growing a semiconductor layer on a silicon system substrate; an observation step for observing an external peripheral section of the produced epitaxial wafer; and a removal step for removing cracking, epitaxial layer delamination, or a reaction mark portions observed in the observation step. The method for manufacturing a semiconductor epitaxial wafer as provided by the invention thereby makes it possible to obtain a semiconductor epitaxial wafer entirely devoid of cracks.