HIGH PERFORMANCE STANDARD CELL

摘要

A transistor cell is provided that includes a continuous oxide definition (OD) region defined in a substrate; a gate (450) for a transistor between a first dummy gate (425) and a second dummy gate (430), wherein a source for the transistor is defined in a first portion of the OD region between the gate and the first dummy gate, and wherein a drain for the transistor is defined in a second portion of the OD region between the gate and a first side of the second dummy gate; a first gate-directed local interconnect (470) and a first diffusion- directed local interconnect (440) couple a third portion of the OD region adjacent a second opposing side of the second dummy gate and the second dummy gate to a source voltage.