TUNABLE SOI LASER

摘要

A wavelength tunable silicon-on-insulator (SOI) laser (1) comprising: a laser cavity including: a semiconductor gain medium (2) having a front end (21) and a back end (22), wherein a mirror (10) of the laser cavity is located at the back end (22) of the semiconductor gain medium; and a phase-tunable waveguide platform (3) coupled to the front end of the semiconductor gain medium, the phase-tunable waveguide platform comprising: a first resonator (34) and a second resonator (35); at least one resonator being a phase-tunable resonator; wherein the first resonator is any one of: an MMI device (34) including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a Fabry-Perot filter; a ring resonator; or a waveguide Fabry-Perot filter; and wherein the second resonator is any one of: an MMI device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a Fabry-Perot filter; a ring resonator; or a waveguide Fabry-Perot filter. Output coupling from the resonator may be realized by a 1x3 coupler (4) and the resonator may comprise an additional phase tuning element (53) for wavelength fine adjustment.