METHOD FOR GROWING HIGH-QUALITY SAPPIER SINGLE CRYSTAL

摘要

The present invention relates to an apparatus and a method for growing a high-quality sappier single crystal. The apparatus for growing a high-quality sappier single crystal comprises: a chamber having an inner space; an insulating material which is arranged within the chamber and insulates the inside and the outside of the chamber; a crucible which is arranged within the insulating material and grows a sapphire single crystal as an alumina material is injected thereinto; and a heater which melts the alumina material stored in the crucible by being arranged between the insulating material and the crucible, and is separated into an upper heater unit and a lower heater unit.