METHOD FOR PRODUCING EPITAXIAL WAFER, AND SILICON-BASED SUBSTRATE FOR EPITAXIAL GROWTH

摘要

The present invention is a method for producing an epitaxial wafer having an epitaxial layer on a silicon-based substrate, wherein the method for producing an epitaxial wafer is characterized in that a semiconductor layer is epitaxially grown on the silicon-based substrate after an external peripheral section of the silicon-based substrate is terrace-formed. A method is thereby provided for producing an epitaxial wafer that has an epitaxial layer on a silicon-based substrate, the method allowing a completely crack-free epitaxial wafer to be obtained.