Example implementations relate to dynamic random-access memory (DRAM) row sparing. In example implementations, utilization of a failed row of a DRAM device may be excluded. A fuse in the DRAM device may be blown to replace the failed row with a spare row. The fuse may be blown during runtime operation of the DRAM device. Error-correcting code (ECC) may be used to correct erroneous data from the failed row while the fuse is being blown. Accesses of the failed row may be redirected to the spare row after the fuse is blown.
申请公布号
WO2015133982(A1)
申请公布日期
2015.09.11
申请号
WO2014US19801
申请日期
2014.03.03
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人
WALTON, ANDREW C.;BENEDICT, MELVIN K.;POPE, ERIC L.;HANDGEN, ERIN A.