| 摘要 |
An organic thin film transistor having a gate electrode, an organic semiconductor layer, a gate insulation layer, a source electrode, and a drain electrode on a substrate, wherein the organic semiconductor layer contains an organic semiconductor and a resin (C) having one or more groups selected from the group consisting of a group having a fluorine atom, a group having a silicon atom, an alkyl group having one or more carbon atoms or in the case of an alkoxycarbonyl group, two or more carbon atoms, a cycloalkyl group, an aralkyl group, an aryloxycarbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group. In addition, a method for manufacturing an organic thin film transistor in which an application liquid containing the organic semiconductor and the resin (C) is applied and the resin (C) is caused to be unevenly distributed. |
