| 摘要 |
A bottom-gate organic thin film transistor which comprises: a substrate; a gate electrode that is arranged on the substrate; a first gate insulating layer that is arranged so as to cover the gate electrode; a second gate insulating layer that is arranged on the first gate insulating layer; an organic semiconductor layer that is arranged on the second gate insulating layer; and a source electrode and a drain electrode, which are arranged in contact with the organic semiconductor layer and are connected to each other via the organic semiconductor layer. The second gate insulating layer-side surface of the first gate insulating layer is subjected to an alignment treatment, and the second gate insulating layer is obtained by polymerizing and immobilizing a polymerizable crystalline compound, which has been aligned in accordance with the alignment treatment, in the aligned state. |
