| 摘要 |
The invention relates to a method for creating a photovoltaic cell with selective doping, which comprises the following steps: providing a semiconductor substrate doped with a first conductivity type; forming a first doped region in the substrate, the first region having a first concentration of doping elements; forming, by ion implantation of doping elements in the substrate, at least one set of alignment units, the largest size of which is smaller than one millimeter, and a second region, adjacent to the first region and having a second doping element concentration which is higher than the first concentration; heat-treating the substrate such as to activate the doping elements and to form an oxide layer at the surface of the substrate over the alignment units, the first region and the second region, the second concentration and the heat treatment conditions being selected such that the oxide layer has a thickness above the alignment units that is larger, by at least 10 nm, than the thickness of the oxide layer above an area of the substrate adjacent to the alignment units; depositing an antireflection layer onto the oxide layer; and depositing an electrode onto the antireflection coating, through a screen, opposite the second region. The screen is positioned relative to the substrate by means of the alignment units. |
