发明名称 SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND COMPUTER-READABLE RECORDING MEDIUM
摘要 <p>The present invention is to efficiently supply a cleaning gas to desired points in a shower head. A substrate processing apparatus processes a substrate in a processing space by supplying gas to the processing space by interposing the shower head therein as a gas dispersion device. The substrate processing apparatus includes: a gas supply tube which is connected to the shower head; a gas exhaust tube which is connected to the shower head; a connection tube which is connected to the gas supply tube and the gas exhaust tube; a processing gas supply system which is connected to a lower side of a gas supply direction in comparison with the connection points of the gas supply tube with the connection tube and supplies a processing gas for processing the substrate in the gas supply tube; and a cleaning gas supply system which is connected to the gas supply tube and the gas exhaust tube, supplies the cleaning gas to the show head in both directions of the gas exhaust tube and the gas supply tube, and is located on an upper side of the gas supply direction in comparison with the connection points of the gas supply tube with the connection tube.</p>
申请公布号 KR101552532(B1) 申请公布日期 2015.09.11
申请号 KR20140067425 申请日期 2014.06.03
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 YAHATA TAKASHI
分类号 H01L21/302;H01L21/02 主分类号 H01L21/302
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