LDMOS TRANSISTOR AND METHOD OF FORMING THE LDMOS TRANSISTOR WITH IMPROVED RDS*CGD

摘要

In described examples, the Rds*Cgd figure of merit (FOM) of a laterally diffused metal oxide semiconductor (LDMOS) transistor (100) is improved by forming the drain drift region (112) with a number of dopant implants at a number of depths (D1/D2), and forming a step-shaped back gate region (128) with a number of dopant implants at a number of depths (D3/D4/D5) to adjoin the drain drift region (112).