发明名称 |
BORON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING BORON ION IMPLANTATION |
摘要 |
A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials. |
申请公布号 |
WO2015134430(A1) |
申请公布日期 |
2015.09.11 |
申请号 |
WO2015US18396 |
申请日期 |
2015.03.03 |
申请人 |
PRAXAIR TECHNOLOGY, INC. |
发明人 |
SINHA, ASHWINI, K.;SMITH, STANLEY, M.;HEIDERMAN, DOUGLAS, C.;CAMPEAU, SERGE, M. |
分类号 |
H01J37/317 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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地址 |
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