SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device suitable for miniaturization and higher density. The semiconductor device includes a first transistor, a second transistor overlapping with the first transistor, a capacitor overlapping with the second transistor, and a first wiring electrically connected to the capacitor. The first wiring includes a region overlapping with an electrode of the second transistor. The first transistor, the second transistor, and the capacitor are electrically connected to one another. A channel of the first transistor includes a single crystal semiconductor. A channel of the second transistor includes an oxide semiconductor.

主权项

1. A semiconductor device comprising:
a first transistor; a second transistor overlapping with the first transistor; a first capacitor overlapping with the second transistor; and a first wiring electrically connected to the first capacitor, wherein the first wiring and an electrode of the second transistor overlap each other; wherein the first transistor, the second transistor and the first capacitor are electrically connected to each other, wherein a channel of the first transistor comprises a single crystal semiconductor, and wherein a channel of the second transistor comprises an oxide semiconductor.