| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM |
| 摘要 |
A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate, and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second gas containing the predetermined element and a halogen group to the substrate, and supplying a third gas to the substrate. |
| 申请公布号 |
US2015255269(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201514719097 |
申请日期 |
2015.05.21 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
HARADA Katsuyoshi;HIROSE Yoshiro;KAMAKURA Tsukasa;SANO Atsushi;ORIHASHI Yugo |
| 分类号 |
H01L21/02;C23C16/52 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate; and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second gas containing the predetermined element and a halogen group to the substrate; and supplying a third gas to the substrate. |
| 地址 |
Tokyo JP |
