3-D Inductor and Transformer

摘要

In accordance with an embodiment, a semiconductor device comprises a semiconductor die, an interposer, and conductive bumps bonding the semiconductor die to the interposer. The semiconductor die comprises a first metallization layer, and the first metallization layer comprises a first conductive pattern. The interposer comprises a second metallization layer, and the second metallization layer comprises a second conductive pattern. Some of the conductive bumps electrically couple the first conductive pattern to the second conductive pattern to form a coil. Other embodiments contemplate other configurations of coils, inductors, and/or transformers, and contemplate methods of manufacture.

主权项

1. A structure comprising:
a semiconductor die comprising:
a first metallization layer comprising a first conductive pattern; anda second metallization layer over the first metallization layer, the second metallization layer comprising a second conductive pattern; an interposer comprising:
a third metallization layer on a first side of the interposer, the third metallization layer comprising a third conductive pattern; anda fourth metallization layer over the third metallization layer, the fourth metallization layer comprising a fourth conductive pattern; and a first set of conductive bumps bonding the semiconductor die to the interposer, at least one of the first set of conductive bumps electrically coupling one of the first conductive pattern and the second conductive pattern to one of the third conductive pattern and the fourth conductive pattern to form a first coil, and at least one other of the first set of conductive bumps electrically coupling one of the first conductive pattern and the second conductive pattern to one of the third conductive pattern and fourth conductive pattern to form a second coil, the first coil being distinct from the second coil.