发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce standby power and prevent malfunction of a logic circuit performing clock gating.SOLUTION: A logic circuit has a transistor that turns off in a state in which a potential difference exists between a source terminal and a drain terminal over a period in which a clock signal is not supplied. A channel formation region of the transistor is composed of an oxide semiconductor in which a hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5×10(atoms/cm) or less. For this reason, a leakage current of the transistor can be reduced. Consequently, the standby power of the logic circuit can be reduced, and the malfunction of the logic circuit can be prevented.
申请公布号 JP2015164212(A) 申请公布日期 2015.09.10
申请号 JP20150084694 申请日期 2015.04.17
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SHIONOIRI YUTAKA;KOBAYASHI HIDETOMO
分类号 H01L29/786;H01L21/336;H01L21/8238;H01L27/08;H01L27/092;H03K19/00;H03K19/096 主分类号 H01L29/786
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