NITRIDE SEMICONDUCTOR STACKED BODY AND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

According to one embodiment, the n-side electron barrier layer is provided at a region close to an end of the active layer on the n-type cladding layer side. The region is located within a range of an electron diffusion length from the active layer. The n-side electron barrier layer prevents electrons having energy which is not more than predetermined energy from being injected into the active layer.

主权项

1. A nitride semiconductor stacked body comprising:
an n-type cladding layer including a nitride semiconductor; a p-type cladding layer including a nitride semiconductor; an active layer provided between the n-type cladding layer and the p-type cladding layer, the active layer including a nitride semiconductor, a plurality of well layers, and a plurality of barrier layers which are interposed between the respective well layers and have band gap energy greater than the well layers; and an n-side electron barrier layer provided at a region close to an end of the active layer on the n-type cladding layer side, the region being located within a range of an electron diffusion length from the active layer, the n-side electron barrier layer preventing electrons having energy which is not more than predetermined energy from being injected into the active layer.