NONVOLATILE MEMORY DEVICE

摘要

According to one embodiment, a plurality of first wirings are arranged along a first direction and a second direction that intersect each other and extending in a third direction perpendicular to the first and second directions. A plurality of second wirings extend in the second direction and are provided at predetermined intervals along the third direction of the first wirings. N channel field-effect transistors are provided at ends of the first wirings. Memory cells are placed at intersections of the first wirings and the second wirings. The memory cells are formed of a variable resistive layer of which the first wiring side is large in resistivity and the second wiring side is small in resistivity.

主权项

1. A nonvolatile memory device comprising:
a plurality of first wirings arranged along a first direction and a second direction that intersect each other and extending in a third direction perpendicular to the first and second directions; a plurality of second wirings extending in the second direction and provided at predetermined intervals along the third direction of the first wirings; memory cells placed at intersections of the first wirings and the second wirings, each of the memory cells being sandwiched between one of the first wirings and one of the second wirings; and select transistors provided at ends of the first wirings, wherein the select transistors are N channel field-effect transistors, and the memory cells are formed of a variable resistive layer of which the resistance state changes according to an electrical signal applied thereto and of which the first wiring side is large in resistivity and the second wiring side is small in resistivity.